Chemistry for chemical vapor deposition of titanium containing films

ABSTRACT

Titanium-containing films exhibiting excellent uniformity and step coverage are deposited on semiconductor wafers in a cold wall reactor which has been modified to discharge plasma into the reaction chamber. Titanium tetrabromide, titanium tetraiodide, or titanium tetrachloride, along with hydrogen, enter the reaction chamber and come in contact with a heated semiconductor wafer, thereby depositing a thin titanium-containing film on the wafer&#39;s surface. Step coverage and deposition rate are enhanced by the presence of the plasma. The use of titanium tetrabromide or titanium tetraiodide instead of titanium tetrachloride also increases the deposition rate and allows for a lower reaction temperature. Titanium silicide and titanium nitride can also be deposited by this method by varying the gas incorporated with the titanium precursors.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.10/144,614, filed on May 13, 2002 now U.S. Pat. No. 6,777,330, which isa continuation of U.S. application Ser. No. 09/296,889, filed on Apr.22, 1999, which issued as U.S. Pat. No. 6,444,556 on Sep. 3, 2002.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the field of integratedcircuit manufacturing technology and, more particularly, to an improvedmethod for depositing thin films.

2. Background of the Related Art

In the manufacturing of integrated circuits, numerous microelectroniccircuits are simultaneously manufactured on semiconductor substrates.These substrates are usually referred to as wafers. A typical wafer iscomprised of a number of different regions, known as die regions. Whenfabrication is complete, the wafer is cut along these die regions toform individual die. Each die contains at least one microelectroniccircuit, which is typically replicated on each die. One example of amicroelectronic circuit which can be fabricated in this way is a dynamicrandom access memory (“DRAM”).

Although referred to as semiconductor devices, integrated circuits arein fact fabricated from numerous materials of varying electricalproperties. These materials include insulators or dielectrics, such assilicon dioxide, and conductors, such as aluminum or tungsten, inaddition to semiconductors, such as silicon and germanium.

In the manufacture of integrated circuits, conductive paths are formedto connect different circuit elements that have been fabricated within adie. One method to make these connections is through the use of openingsin intermediate insulative layers. These openings are typically referredto as “contact openings” or “vias.” A contact opening is typicallycreated to expose an active region, commonly referred to as a dopedregion, while vias traditionally refer to any conductive path betweenany two or more layers in a semiconductor device.

After a contact opening, for instance, has been formed to expose anactive region of the semiconductor substrate, an enhanced doping may beperformed through the opening to create a localized region of increasedcarrier density within the bulk substrate. This enhanced region providesa better electrical connection with the conductive material which issubsequently deposited within the opening. One method of increasingconductivity further involves the deposition of a thintitanium-containing film, such as titanium silicide, over the wafer sothat it covers the enhanced region prior to deposition of the conductivelayer. Thin films of titanium-containing compounds also find other usesas well in the fabrication of integrated circuits. For example, titaniumnitride is used as a diffusion barrier to prevent chemical attack of thesubstrate, as well as to provide a good adhesive surface for thesubsequent deposition of tungsten.

Indeed, many reasons exist for depositing thin films between adjacentlayers in a semiconductor device. For example, thin films may be used toprevent interdiffusion between adjacent layers or to increase adhesionbetween adjacent layers. Titanium nitride, titanium silicide, andmetallic titanium are known in the art as materials that can bedeposited as thin films to facilitate adhesion and to reduceinterdiffusion between the layers of a semiconductor device. Other filmsthat may be useful for these purposes also include titanium tungsten,tantalum nitride, and the ternary alloy composed of titanium, aluminum,and nitrogen.

The deposition of titanium-containing films is just one example of astep in the manufacture of semiconductor wafers. Indeed, any number ofthin films, insulators, semiconductors, and conductors may be depositedonto a wafer to fabricate an integrated circuit. As the size of themicroelectronic circuits, and therefore the size of die regions,decreases, the percentage of reliable circuits produced on any one waferbecomes highly dependent on the ability to deposit these thin filmsuniformly across the surface of the wafer. This includes uniformdeposition on horizontal surfaces, slanted surfaces, and verticalsurfaces, including those surfaces which define the walls and base ofcontacts and vias. If these thin films are not deposited in a uniformmanner, gaps may be created which prevent the thin film from fullyperforming its function. The likelihood of the existence of these gapstends to increase as the films become thinner.

Films may be deposited by several different methods, such as thermalgrowth, sputter deposition, spin-on deposition, chemical vapordeposition (CVD), and plasma enhanced chemical vapor deposition (PECVD).In thermal growth, the wafer substrate is heated at precisely controlledtemperatures, typically between 800 and 1200° C., with a choice ofambient gases. The high temperature promotes the reaction between theambient gas and the wafer substrate. For instance, films of silicondioxide are often produced by this method. The problem with this methodis the extremely high deposition temperatures required. Extremely hightemperatures are a concern for two reasons. First, high temperature maybe incompatible with or even detrimental to other elements of theintegrated circuit, and, second, excessive cycling from low to hightemperatures can damage a circuit, thereby reducing the percentage ofreliable circuits produced from a wafer. Therefore, a lower depositiontemperature is typically preferred as long as the characteristics of thedeposited film are unaffected.

In sputter deposition, the material to be deposited is bombarded withpositive inert ions. Once the material exceeds its heat of sublimation,atoms are ejected into the gas phase where they are subsequentlydeposited onto the substrate, which may or may not be negatively biased.Sputter deposition has been widely used in integrated circuit processesto deposit titanium-containing films. The primary disadvantage ofsputter deposition is that it results in films having poor stepcoverage, so it may not be widely useable in submicron processes. Filmsdeposited by sputter deposition on slanted or vertical surfaces do notexhibit uniform thickness, and the density of films deposited on thesesurfaces is usually not as high as the films deposited on horizontalsurfaces.

In spin-on deposition, the material to be deposited is mixed with asuitable solvent and spun onto the substrate. The primary disadvantageof spin-on deposition is that nominal uniformity can only be achieved atrelatively high thicknesses. Therefore, this method is primarily usedfor the deposition of photoresist and the like. It is generally notuseful for the deposition of thin films.

As previously indicated, the trend for reducing the size of die regionshas dictated the reduction of the thickness of many deposited films.These thin films need to have improved step coverage to reduce thenumber of gaps in the films and to increase the yield of operabledevices. Of the methods discussed above, CVD and PECVD are best suitedto deposit the thinnest films, as films deposited by sputter depositionon slanted or vertical surfaces do not exhibit the degree of uniformityobtainable by CVD and PECVD.

In CVD, the gas phase reduction of highly reactive chemicals under lowpressure results in very uniform thin films. A basic CVD process usedfor depositing titanium involves a given composition of reactant gasesand a diluent which are injected into a reactor containing one or moresilicon wafers. The reactor is maintained at selected pressures andtemperatures sufficient to initiate a reaction between the reactantgases. The reaction results in the deposition of a thin film on thewafer. If the gases include hydrogen and a titanium precursor, atitanium-containing film will be deposited. For example, if, in additionto hydrogen and the titanium precursor, the reactor contains asufficient quantity of nitrogen or a silane, the resultingtitanium-containing film will be titanium nitride and titanium siliciderespectively. Plasma enhanced CVD is a form of CVD that includesbombarding the material to be deposited with a plasma to generatechemically reactive species at relatively low temperatures.

Chemical vapor deposition is typically carried out in one of two typesof reactor. One type of reactor is called a hot wall reactor. A hot wallreactor is operated at a low pressure, typically 1 Torr or less, andhigh temperatures, typically 600° C. or greater. The other type ofreactor is called a cold wall reactor. A cold wall reactor is operatedat atmospheric pressure and low temperatures, typically 400 to 600° C.

The primary advantage of the hot wall reactor is that deposited filmsexhibit excellent purity and uniform step coverage. However, the hotwall reactor process is also characterized by low deposition rates, hightemperatures, and the potential for the occurrence of unwanted reactionson the walls of the reaction chamber. Conversely, the cold wall reactorexhibits high deposition rates but poor step coverage.

Exposure to extreme temperatures and excessive cycling from low to hightemperatures during the fabrication of integrated circuits can renderthe circuits useless. Therefore, a process for depositing filmsexhibiting uniform step coverage that can be conducted with a minimum ofexposure to elevated temperatures could have a dramatic impact on theyield of reliable circuits. It has been thought that PECVD is the bestmethod of achieving this result. In fact, plasma deposition has beenused to produce titanium-containing films in a cold wall reactormaintained at approximately 400° C. The result of this deposition isthin titanium-containing films exhibiting good step coverage and growthrate.

However, the current plasma deposition technology does have itslimitations. Because of the higher pressures associated with depositionin a cold wall reactor, it is difficult to deposit films that exhibit ahigh degree of uniform coverage in contacts and vias having high aspectratios. This difficulty extends to both the vertical surfaces of thecontacts and vias as well as the horizontal surfaces at the base of thecontacts and vias.

The present invention may address one or more of the problems set forthabove.

SUMMARY OF THE INVENTION

Certain aspects commensurate in scope with the originally claimedinvention are set forth below. It should be understood that theseaspects are presented merely to provide the reader with a brief summaryof certain forms the invention might take and that these aspects are notintended to limit the scope of the invention. Indeed, the invention mayencompass a variety of aspects that may not be set forth below.

In accordance with one aspect of the present invention, there isprovided a chemical vapor deposition process for depositing a titaniumcontaining film on a substrate. The process includes the steps of: a)disposing the substrate inside a reaction chamber; b) bringing thesubstrate to a given temperature; c) introducing a titanium source gas,the titanium source gas being at least one of titanium bromide andtitanium iodide, into the reaction chamber; d) introducing a reactantgas of at least one of hydrogen, silane, nitrogen and mixtures thereofinto the reaction chamber; and e) discharging plasma inside the reactionchamber to deposit the titanium containing film onto the substrate.

In accordance another aspect of the present invention, there is provideda chemical vapor deposition process for depositing film on a substrate.The process includes the steps of: a) disposing the substrate inside acold wall reaction chamber; b) bringing the substrate to a giventemperature; c) introducing a titanium source gas selected from thegroup consisting of titanium bromide and titanium iodide into thereaction chamber; d) introducing a reactant gas of at least one ofhydrogen, silane, nitrogen and mixtures thereof into the reactionchamber; and e) discharging plasma inside the reaction chamber todeposit the titanium containing film onto the substrate.

In accordance with still another aspect of the present invention, thereis provided a chemical vapor deposition process for depositingtitanium-containing films on a substrate. The process includes the stepsof: a) disposing the substrate inside a reaction chamber maintained at agiven temperature; b) introducing a titanium source gas into thereaction chamber; c) introducing a reactant gas into the reactionchamber; d) discharging plasma inside the reaction chamber and applyinga voltage to substrate to bias the substrate to deposit atitanium-containing film onto the substrate.

In accordance with yet another aspect of the present invention, there isprovided a chemical vapor deposition process for depositing atitanium-containing film on a substrate. The process includes the stepsof: a) disposing the substrate inside a cold wall reaction chambermaintained at a given temperature; b) introducing a titanium source gasinto the reaction chamber; c) introducing a reactant gas of at least oneof hydrogen, silane, nitrogen, and mixtures thereof into the reactionchamber; and d) discharging plasma inside the reaction chamber andapplying a voltage to the surface of the wafer to bias the surface todeposit the titanium-containing film onto the substrate.

In accordance with a further aspect of the present invention, there isprovided an in-situ plasma cleaning process for cleaning contactopenings. The process includes the steps of: a) disposing a substratehaving contact openings inside a reaction chamber; b) bringing thesubstrate to a given temperature; c) introducing a cleaning agent of atleast one of hydrogen, argon, or nitrogen trifluoride into the reactionchamber; d) discharging plasma inside the reaction chamber and applyinga voltage to the substrate to bias the substrate to remove material fromwithin the contact openings.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages of the invention will become apparentupon reading the following detailed description and upon reference tothe drawings in which:

FIG. 1 illustrate a semiconductor wafer and its constituent die regions;

FIG. 2 is a diagrammatic cross-section of a semiconductor waferprocessed in accordance with the present invention, wherein a thin filmhas been deposited onto the surface of a die including the surfaces of acontact opening;

FIG. 3 is a diagrammatic cross-section of a semiconductor waferprocessed in accordance with the present invention, wherein a conductivelayer has been deposited onto the thin film previously deposited; and

FIG. 4 is schematic diagram of a cold wall reactor used in chemicalvapor deposition processes which has been modified to discharge plasmainto the reaction chamber and which has been further modified to apply avoltage to the surface of the die.

DESCRIPTION OF SPECIFIC EMBODIMENTS

In the interest of clarity, not all features of an actual implementationinto an integrated circuit process are described in this specification.This illustration is restricted to those aspects of an integratedcircuit process involving the deposition of thin films. Conventionaldetails of integrated circuit processes, such as mask generation, resistcasting, resist development, etching, doping, cleaning, implantation andannealing are not presented as such details are well known in the art ofintegrated circuit manufacture.

Turning now to the drawings, a typical semiconductor wafer isillustrated in FIG. 1 and designated by a reference numeral 10. Thewafer 10 includes a number of different regions, known as die regions12. Each die region 12 may include an integrated circuit containingvarious features and fabricated using various materials and processes.For the purposes of this discussion, one of the die regions 12 will bediscussed. The die region 12 includes a thin titanium-containing film.An example of such a film is illustrated in FIG. 2. Specifically, FIG. 2illustrates a cross-sectional view of a die region 12 which includes anenhanced doped region or active region 24 within a semiconductorsubstrate 26. The active region 24 by be formed by an implantationprocess, for instance. The bulk substrate 26 is coated with aninsulative layer 22, such as borophosphosilicate glass (BPSG) orphosphosilicate glass (PSG). The insulative layer 22 is etched to form acontact opening 20 through the insulative layer 22 to the active region24. Of course it should be understood that the depiction of a contactopening to an active region is merely exemplary of a high-aspect ratiofeature and that this discussion applies to other high-aspect ratiofeatures, such as vias, as well.

Using the method described in detail below, a layer of titanium ortitanium-containing film 28 is deposited across the wafer such that itlines the contact opening 20. The film 28 exhibits good adhesion to thecontact opening 20 and the active region 24, along with excellent stepcoverage. The film 28 also exhibits good adhesion to a subsequentlydeposited conductive metal layer 21 illustrated in FIG. 3.

By known CVD processes, the only way good step coverage could beachieved was by deposition in a hot wall reactor. However, deposition inthe hot wall reactor was achieved at low deposition rates and was oftenaccompanied by unwanted reactions which occurred at the walls of thereactor. Conversely, use of a traditional cold wall reactor achievedmore favorable deposition rates but sacrificed good step coverage. Whena cold wall reactor is modified to discharge plasma into the reactionchamber, thin films are deposited that exhibit good step coverage as aresult of using titanium tetrachloride as the titanium gas source.

To perform the deposition of the film 28, a cold wall CVD reactor 30 isadvantageously used, as illustrated in FIG. 3, although a similarlymodified hot wall reactor may also be used under the conditions setforth below to achieve improvements. The cold wall CVD reactor 30 ismodified with an RF generator 32. A titanium source gas, advantageouslyobtained from a titanium halide such as titanium tetrachloride, titaniumbromide, or titanium iodide, and hydrogen are introduced into thereaction chamber 34 through a shower head 31. If so desired, a carriergas, such as argon or helium, may be added to the reactant gases. Thegases may or may not be pre-mixed. The gases are generally introducedthrough the shower head 31 to achieve good dispersion of the gases, butthe gases can be introduced by other means. Desired reaction pressuresare maintained by conventional pressure control components, including apressure sensor 33, a pressure switch 35, an air operating vacuum valve37, and a pressure control valve 39. The carrier gas and the resultantgas, such as HCl when titanium tetrachloride is used as the titaniumprecursor, given off during the reaction escapes from the reactionchamber 34 through an exhaust vent 42. These gases pass through aparticulate filter 44, and gas removal is facilitated by a roots blower46.

In the reactor chamber 34, a substrate holder 36 is heated to atemperature of less than 600° C., and typically less than 400° C. Infact, temperatures may be in the range of 200 to 350° C., with pressuresin the range of 0.2 to 2.0 Torr. Heating may be achieved through the useof halogen lamps 38, so that the silicon wafer 10 is heated byconvection. As the reactant gases enter the reaction chamber 34 throughthe shower head 31, a voltage is applied between the substrate holder 36and the reaction chamber 34 for a period of from about 50 to 150 secondstypically. The voltage may be supplied by an RF generator 32 with oneline 48 a coupled to a wall of the reaction chamber 34 and another line48 b coupled to the substrate holder 36. The RF voltage causes theionization of hydrogen gas present as a reactant to create a plasma ofH⁺ ions. The plasma is discharged in the space above the wafer 10 tofacilitate the deposition reaction.

If no further modification to the deposition process is made, films 28are deposited at relatively high rates. These films 28 exhibit good stepcoverage which is not inherent in a cold wall reactor system in whichplasma is not used. However, deposition along the surfaces of contacts20 and vias is generally not optimal because the pressures associatedwith deposition preclude optimal deposition in the recesses of theseconductive paths, particularly when a cold wall CVD reactor is employed.

However, a voltage, such as an RF voltage, may be applied to the surfaceof the wafer 10 via a line 48 c from the RF generator 32. If thisvoltage is applied as the plasma is being discharged above the wafer 10,further improvements in step coverage can be achieved. In particular,step coverage along the surfaces of the contact 20 is improved. Theapplied voltage causes the surface of the wafer 10 to become biased. Thecharged surface attracts oppositely charged species from the space abovethe wafer 10. The charged species are drawn to the surface overcomingthe pressures which had previously hindered deposition. Typically thesurface of the wafer 10 is negatively biased to attract the positivemetal cations.

As a cumulative result of this process, a chemical reaction occurs whichresults in the deposition of a titanium-containing film 28 along theexposed surfaces of the wafer 10. These surfaces include the verticaland horizontal surfaces of the contact 20. The deposited films 28exhibit uniform step coverage. In particular, the vertical andhorizontal surfaces of the contact 20 exhibit improved step coveragecompared to films 28 deposited onto the surface of a wafer 10 which hasnot been biased. The films 28 which are typically deposited by thisprocess using titanium tetrachloride are generally less than 3000 Åthick, and the reaction can be characterized as TiCl₄+2H₂→Ti+4HCl. Thedeposition of titanium from titanium tetrachloride in this mannergenerally requires an exposure period greater than 200 seconds.

Optionally, a reducing agent can be introduced into the reaction chamber34 along with the titanium precursor and hydrogen. When this reducingagent is nitrogen, the titanium-containing film 28 which is depositedonto the wafer 10 is composed principally of titanium nitride, and thereaction can be characterized by 2TiCl₄+4H₂+N₂→2TiN+8HCl. When thereducing agent is a silane, the titanium containing film 28 which isdeposited onto the wafer 10 is composed principally of elementaltitanium and titanium silicide, and the reaction can be characterized by3TiC1₄+2H₂+2SiH₄→2Ti+TiSi₂+12HC1.

As mentioned above, the modified reactor may contain titaniumtetrabromide or titanium tetraiodide as the titanium source gas, insteadof titanium tetrachloride. This results in the deposition of thintitanium films exhibiting good step coverage. It has been found thatthis deposition can be achieved at lower temperatures and in a shorterperiod of time as compared with known methods, partly as a result oftitanium tetrabromide and titanium tetraiodide being more reactive thantitanium tetrachloride. This results in a faster deposition rate of thetitanium film, and allows for the reaction to be conducted at lowertemperatures. For instance, the deposition of titanium-containing filmsexhibiting good step coverage can be achieved in less than 200 secondsof exposure at temperatures less than 350° C. The chemical reaction canbe characterized by TiBr₄ (or TiI₄)+2H₂→Ti+4HBr (or 4 HI).

The presence of the plasma allows for good step coverage under thetemperature conditions normally employed in a cold wall reactor. Also,the wafer 10 may be biased as discussed above so that the material to bedeposited is drawn into the contact 20 or via to improve the stepcoverage of the deposited film. Furthermore, as discussed previously, areducing agent can be introduced into the reactor chamber along with thetitanium precursor and hydrogen. When this reducing agent is nitrogen,the titanium-containing film deposited onto the wafer is composedprincipally of titanium nitride, and the reaction can be characterizedby 2TiBr₄ (or 2TiI₄)+4H₂+N₂→2TiN+8HBr (or 8 HI). When the reducing agentis a silane, the titanium containing film deposited onto the wafer iscomposed principally of elemental titanium and titanium silicide, andthe reaction can be characterized by 3TiBr₄ (or3TiI₄)+2H₂+2SiH₄→2Ti+TiSi₂+12HBr (or 12 HI).

As the size of devices decreases the thickness of these films 28,whether used as diffusion barriers or adhesive layers, also decreases.By ensuring the highest degree of uniform step coverage, the likelihoodof producing a higher percentage of reliable devices increases.Additionally, depositing films 28 as discussed above results in a higherdeposition rate. Because the deposited material is drawn into thecontacts 20 and vias, the films 28 are deposited in a shorter period oftime. This ability to deposit films 28 in a shorter period of time alsoincreases the likelihood of obtaining a higher yield of reliablecircuits. The barrier properties and adhesive properties of thedeposited films 28 are generally at their lowest at elevatedtemperatures. Therefore, the longer the period of exposure to elevatedtemperatures, the greater the likelihood of producing faulty devices.Because deposition by the described methods results in deposition in ashorter period of time, the amount of time the wafer 10 is exposed toelevated temperatures decreases.

Furthermore, the methods may serve other uses. For example, an in-situplasma cleaning of the surfaces of the contact or via, in particular thebase of these conductive paths, can be conducted. It is not uncommon foroxides, particularly oxides of silicon, to form during semiconductorprocesses. The presence of these oxides is generally not desired. Toconduct the cleaning operation which removes the unwanted oxides, thedeposition process previously described is employed except thathydrogen, argon, and nitrogen trifluoride are charged to the reactor.When plasma is then discharged in the reactor, the oxide of silicon isconverted into a volatile product, such as SiF₄, which is readilyremoved. If, in addition to discharging plasma into the reactor, avoltage is applied to the surface of the wafer to bias that surfacenegatively, the cleaning operation's efficiency at removing unwantedoxide deposits located along the walls and base of contacts and vias isincreased. Without this modification, the cleaning agents may notovercome the reaction pressures and penetrate the recesses of thecontacts and vias.

While the invention is susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and will be described in detail herein. However,it should be understood that the invention is not intended to be limitedto the particular forms disclosed. Rather, the invention is to cover allmodifications, equivalents, and alternatives falling within the spiritand scope of the invention as defined by the following appended claims.

1. A method for disposing a titanium-containing film on a substrate, themethod comprising the acts of: disposing a substrate inside a reactionchamber; bringing the substrate to a given temperature; introducing atitanium source gas into the reaction chamber; introducing a reactantgas into the reaction chamber; generating a plasma above the substrate;and applying a voltage directly to the substrate to deposit atitanium-containing film on the substrate, where the voltage is notapplied through an intermediary structure.
 2. The method of claim 1,wherein a deposition pressure between 0.2 and 2 Torr is maintained inthe reaction chamber.
 3. The method of claim 1, wherein the reactionchamber comprises a hot wall reaction chamber.
 4. The method of claim 1,wherein the reaction chamber comprises a cold wall reaction chamber. 5.The method of claim 1, wherein the given temperature is less than 600°C.
 6. The method of claim 1, wherein the given temperature is less than400° C.
 7. The method of claim 1, wherein the given temperature is inthe range of 200° C. to 350° C.
 8. The method of claim 1, wherein thereactant gas comprises at least one of hydrogen, silane, and nitrogen.9. The method of claim 1, comprising introducing a carrier gas into thereaction chamber.
 10. The method of claim 1, wherein generating a plasmacomprises applying a plasma generating voltage between the reactionchamber and substrate holder.
 11. The method of claim 1, wherein thesubstrate is brought to the given temperature by heating a substrateholder which secures the substrate.
 12. The method of claim 1, whereinthe titanium source gas comprises a titanium tetrahalide.
 13. The methodof claim 1, wherein the titanium source gas comprises at least one oftitanium bromide, titanium iodide, titanium tetrachloride.
 14. Themethod of claim 1, wherein applying the voltage negatively biases thesubstrate.
 15. The method of claim 1, wherein the titanium-containingfilm comprises one of titanium nitride, titanium silicide, and titanium.16. A method for manufacturing an integrated circuit, comprising theacts of: coating a substrate with an insulative layer; forming at leastone contact opening in the insulative layer; disposing the substrateinside a reaction chamber; bringing the substrate to a giventemperature; introducing a titanium source gas into the reactionchamber; introducing a reactant gas into the reaction chamber;generating a plasma above the insulative layer; and applying a voltagedirectly to the substrate to deposit a titanium-containing film on theinsulative layer such that the titanium-containing layer lines the atleast one contact opening where the voltage is not applied through anintermediary structure.
 17. The method of claim 16, wherein the reactionchamber comprises a hot wall reaction chamber.
 18. The method of claim16, wherein the reaction chamber comprises a cold wall reaction chamber.19. The method of claim 16, wherein the given temperature is less than600° C.
 20. The method of claim 16, wherein generating a plasmacomprises applying a plasma generating voltage between the reactionchamber and substrate holder.
 21. The method of claim 16, wherein thetitanium source gas comprises a titanium tetrahalide.
 22. The method ofclaim 16, wherein the titanium source gas comprises at least one oftitanium bromide, titanium iodide, titanium tetrachloride.
 23. Themethod of claim 16, wherein applying the voltage negatively biases thesubstrate.
 24. The method of claim 16, wherein the titanium-containingfilm comprises one of titanium nitride, titanium silicide, and titanium.